Infineon IPW60R190C6 CoolMOS™ Power MOSFET: High-Efficiency Performance for Advanced Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the forefront of meeting these challenges is the Infineon IPW60R190C6, a CoolMOS™ Power MOSFET engineered to deliver exceptional performance in demanding applications. This device exemplifies the technological advancements in superjunction (SJ) MOSFET design, offering system designers a powerful tool to minimize losses and maximize reliability.

A cornerstone of the IPW60R190C6's performance is its exceptionally low on-state resistance (R DS(on)) of just 190 mΩ at a drain-source voltage of 600 V. This low resistance is pivotal in reducing conduction losses, which directly translates into higher efficiency, less heat generation, and the potential for smaller heatsinks. This characteristic is particularly crucial in continuous operation modes, where even minor improvements in R DS(on) can yield significant energy savings and a cooler-running system.

Beyond static losses, dynamic switching performance is critical for high-frequency operation. The IPW60R190C6 is designed with optimized switching characteristics, featuring low gate charge (Q G) and low output capacitance (C OSS). This enables faster switching speeds, which minimizes switching losses—a primary source of inefficiency in circuits like switch-mode power supplies (SMPS) and motor drives. The resulting ability to operate at higher frequencies allows for the use of smaller passive components, such as inductors and transformers, thereby increasing overall power density.

The robustness of this MOSFET is a key attribute for industrial and automotive environments. It boasts a high avalanche ruggedness and excellent thermal stability, ensuring reliable operation under extreme conditions, including voltage spikes and unpredictable load transients. This durability makes it an ideal choice for applications where longevity and failure resistance are paramount.

The device is offered in the TO-247 package, a industry-standard format that provides superior thermal performance, facilitating efficient heat dissipation away from the silicon die. This package choice underscores its suitability for high-power applications.

Typical applications where the IPW60R190C6 excels include:

High-efficiency server and telecom power supplies (PSUs)

Power factor correction (PFC) stages

Solar inverters and renewable energy systems

Industrial motor drives and controls

Electric vehicle (EV) charging infrastructure

ICGOOODFIND: The Infineon IPW60R190C6 CoolMOS™ Power MOSFET stands out as a superior component for designers pushing the limits of efficiency and power density. Its combination of ultra-low on-resistance, fast switching capability, and proven robustness provides a critical advantage in advanced switching applications, from data centers to green energy solutions, enabling the next generation of power electronics.

Keywords: CoolMOS™, Low R DS(on), High-Efficiency, Fast Switching, Power Density.