Infineon IPB60R099CP CoolMOS™ Power Transistor: Advanced Performance for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these systems, the power switching device is critical. The Infineon IPB60R099CP CoolMOS™ Power Transistor stands out as a pinnacle of innovation, engineered specifically to meet the rigorous challenges of high-efficiency switching applications, including switch-mode power supplies (SMPS), power factor correction (PFC), and lighting converters.

A defining feature of the IPB60R099CP is its exceptionally low figure-of-merit (R DS(on) x Q G). With a maximum drain-source on-state resistance (R DS(on)) of just 99 mΩ at a gate-source voltage of 10 V and an ultra-low gate charge (Q G), this superjunction MOSFET delivers an outstanding balance between conduction and switching losses. This synergy is crucial for achieving high efficiency, particularly at high switching frequencies, enabling designers to create smaller, lighter, and more cost-effective power supplies by reducing the size of magnetic components and heat sinks.

The device leverages Infineon's proprietary CoolMOS™ CP technology, which represents a significant advancement over standard MOSFETs. This technology minimizes both switching and conduction losses simultaneously, a feat difficult to achieve with traditional designs. The result is a transistor that operates at significantly cooler temperatures, enhancing overall system reliability and longevity. Furthermore, its high avalanche ruggedness and excellent body diode characteristics ensure robust performance in harsh operating conditions and hard-switching topologies.

Another key advantage is its optimized electromagnetic compatibility (EMC) profile. The inherent design of the superjunction structure and the optimized internal package inductance contribute to smoother switching behavior with reduced ringing. This simplifies filtering efforts and helps systems comply with stringent EMC regulations more easily.

Housed in a TO-263 (D2PAK) package, the IPB60R099CP offers a popular and versatile surface-mount footprint, making it suitable for automated assembly processes. Its high current capability of up to 18.5 A combined with a voltage rating of 600 V makes it an ideal choice for a wide range of industrial and consumer applications where efficiency and power density are paramount.

ICGOODFIND: The Infineon IPB60R099CP CoolMOS™ CP transistor is a superior solution for designers pushing the boundaries of power supply performance. Its industry-leading low on-resistance, minimal gate charge, and robust switching characteristics make it an indispensable component for achieving new levels of energy efficiency and power density in modern high-frequency switching applications.

Keywords: CoolMOS™, High-Efficiency, Low RDS(on), Switching Applications, Power Density