Infineon BSZ100N06LS3: A Comprehensive Look at the 30V Logic Level N-Channel MOSFET

In the realm of power electronics, efficient switching and compact control are paramount. The Infineon BSZ100N06LS3 stands out as a critical component engineered to meet these demands, offering a blend of high performance and ease of use for low-voltage applications. This N-Channel MOSFET, characterized by its 30V drain-source voltage (VDS) rating and logic-level gate drive, is a pivotal solution for designers seeking to optimize power management systems.

Key Features and Electrical Characteristics

The BSZ100N06LS3 is built using Infineon's advanced OptiMOS™ technology, which is renowned for delivering exceptional efficiency and power density. Its most defining feature is its low threshold voltage (VGS(th)), typically around 1.5V. This allows the MOSFET to be fully enhanced—turned on completely—with a gate-source voltage (VGS) of just 4.5V or even lower. This makes it directly compatible with 3.3V and 5V logic outputs from microcontrollers, FPGAs, and other digital ICs, eliminating the need for additional gate driver circuits and simplifying system design.

Beyond its logic-level compatibility, the device boasts an impressively low on-state resistance (RDS(on)) of just 1.8 mΩ (max) at 10V and 2.2 mΩ (max) at 4.5V. This ultra-low resistance is the key to its high efficiency, as it minimizes conduction losses (I²R losses) when the switch is on. This results in less heat generation, higher overall system efficiency, and the potential for smaller heatsinks or even passive cooling. With a continuous drain current (ID) rating of 100A, it is capable of handling significant power in a compact D2PAK (TO-263) package.

Application Notes and Circuit Design Considerations

The primary application for the BSZ100N06LS3 is in DC-DC conversion topologies, such as synchronous buck converters, which are ubiquitous in computing, telecommunications, and consumer electronics for voltage regulation. Its fast switching speeds and low gate charge (QG) are crucial for achieving high switching frequencies, which in turn allow for the use of smaller inductive and capacitive components.

It is also exceptionally well-suited for motor control in robotics, drones, and automotive systems (e.g., window lifters, seat adjusters), as well as for load switching and power management in battery-operated devices. When designing with this MOSFET, several factors must be considered:

Gate Driving: Although it works with 3.3V/5V logic, a dedicated gate driver IC is still recommended for very fast switching transitions to minimize switching losses and prevent issues like shoot-through in half-bridge configurations.

PCB Layout: To realize the full performance potential, a PCB layout with low parasitic inductance is essential. This involves using short, wide traces for the power path (especially the source connection) and placing decoupling capacitors close to the drain and source pins.

Thermal Management: Despite its low RDS(on), at high currents significant power can still be dissipated. Ensuring a sufficient thermal relief through a well-designed PCB copper area (heatsink) is critical for reliable operation.

ICGOO

The Infineon BSZ100N06LS3 is a powerhouse in a small package, perfectly engineered for the modern demands of space-constrained, high-efficiency, and logic-controlled power systems. Its exceptional combination of ultra-low RDS(on), high current handling, and true logic-level control makes it an indispensable component for engineers designing the next generation of efficient power electronics.

Keywords:

1. Logic-Level MOSFET

2. Low RDS(on)

3. Power Efficiency

4. DC-DC Conversion

5. OptiMOS™ Technology