Infineon IKW30N65ES5: A High-Performance 650V TRENCHSTOP™ 5 IGBT for Switching Applications
The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this innovation is the Infineon IKW30N65ES5, a 650V IGBT that exemplifies the advanced performance of the TRENCHSTOP™ 5 technology. This device is engineered to meet the demanding requirements of modern switching applications, including switch-mode power supplies (SMPS), solar inverters, industrial motor drives, and welding equipment.
A key highlight of the IKW30N65ES5 is its exceptional balance between low saturation voltage and minimal switching losses. Traditional IGBTs often force a design trade-off: lower conduction losses come at the expense of higher switching losses, and vice versa. The TRENCHSTOP™ 5 technology shatters this compromise. Through an optimized trench cell structure and a thin-wafer process, this IGBT achieves a remarkably low collector-emitter saturation voltage (VCE(sat)), leading to reduced conduction losses during the on-state. Simultaneously, it features ultra-soft and fast switching characteristics, which minimize turn-off losses and suppress voltage overshoot. This combination is crucial for achieving higher operating frequencies and efficiencies, allowing for the design of smaller, cooler-running systems.
The device is rated for a maximum collector current of 60A, making it a robust solution for high-power circuits. Its 650V blocking voltage provides a safety margin for 400V bus applications, ensuring reliable operation even under voltage spikes and stressful grid conditions. Furthermore, the IKW30N65ES5 offers enhanced ruggedness and is available in the industry-standard TO-247 package, which is renowned for its excellent thermal performance and mechanical durability. This package facilitates efficient heat dissipation, which is critical for maintaining device longevity and stable operation under continuous load.
Designers will also appreciate the positive temperature coefficient of the IGBT, which simplifies the paralleling of multiple devices for even higher power outputs. This characteristic ensures that current is shared evenly between parallel-connected IGBTs, preventing thermal runaway and enhancing system reliability.
ICGOODFIND: The Infineon IKW30N65ES5 stands out as a superior choice for engineers designing next-generation power conversion systems. By delivering an optimal blend of low conduction and switching losses, high ruggedness, and thermal efficiency, this TRENCHSTOP™ 5 IGBT enables the creation of more compact, efficient, and reliable solutions for a wide array of industrial and renewable energy applications.
Keywords: TRENCHSTOP™ 5, Low Switching Losses, High Efficiency, 650V IGBT, Power Switching Applications.
