Infineon IPW60R070C6 CoolMOS™ C6 Power MOSFET: High-Efficiency Performance for Advanced Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these advanced switching applications—from server SMPS and telecom bricks to industrial motor drives and renewable energy inverters—lies the power semiconductor switch. The Infineon IPW60R070C6, a standout in the CoolMOS™ C6 family, is engineered specifically to meet these challenges, offering a blend of ultra-low effective dynamic losses and superior switching performance that sets a new benchmark for high-voltage MOSFETs.

A primary driver of efficiency gains in switching power supplies is the reduction of switching losses, particularly at higher frequencies. The IPW60R070C6, rated for 650 V and 12.5 A, addresses this with an exceptionally low figure-of-merit (R DS(on) x Q G). Its 70 mΩ maximum on-state resistance ensures minimal conduction losses, while its optimized gate charge ensures rapid switching transitions and reduced driving losses. This allows designers to push switching frequencies higher, enabling the use of smaller passive components like magnetics and capacitors, thereby significantly increasing the overall power density of the system.

Beyond raw metrics, the CoolMOS™ C6 technology incorporates several innovative features that contribute to its robust performance. The advanced superjunction structure minimizes parasitic capacitances, leading to softer switching behavior and reduced electromagnetic interference (EMI). This inherent characteristic simplifies EMI filter design, lowering both system complexity and cost. Furthermore, the technology offers an integrated fast body diode with excellent reverse recovery characteristics. This is critical for performance in hard-switching and phase-shifted zero-voltage switching (ZVS) topologies, as it minimizes detrimental reverse recovery currents that can lead to elevated switching losses and potential device stress.

The benefits of the IPW60R070C6 extend across a wide spectrum of applications. In power factor correction (PFC) stages, its low losses directly translate to higher efficiency and improved thermal management. For LLC resonant converters, the combination of low output capacitance (C OSS) and a superior body diode ensures smooth, efficient operation at resonant frequencies. Its high durability and avalanche ruggedness also make it an ideal choice for harsh industrial environments where reliability is paramount.

ICGOOODFIND: The Infineon IPW60R070C6 CoolMOS™ C6 MOSFET is a high-performance solution engineered for the demands of next-generation power supplies. It masterfully balances ultra-low conduction and switching losses, enabling designers to achieve new heights in system efficiency and power density. Its fast body diode and optimized capacitances make it exceptionally versatile for a wide range of topologies, from hard-switched to resonant converters, establishing it as a cornerstone component for advanced switching applications.

Keywords:

1. High-Efficiency

2. Ultra-Low Losses

3. Power Density

4. Fast Switching

5. CoolMOS™ C6