Infineon IPD100N04S4-02: A High-Performance 100V OptiMOS Power MOSFET for Advanced Automotive and Industrial Applications
The relentless drive towards higher efficiency, greater power density, and enhanced reliability in electronic systems defines modern automotive and industrial design. At the heart of this evolution are advanced power semiconductors, with the Infineon IPD100N04S4-02 standing out as a premier solution. This 100V OptiMOS power MOSFET is engineered to meet the rigorous demands of next-generation applications, offering a blend of performance, robustness, and integration that sets a new industry benchmark.
Unmatched Efficiency and Power Density
A core challenge in power design is minimizing energy loss, which directly impacts system efficiency, thermal management, and overall size. The IPD100N04S4-02 addresses this with an exceptionally low typical on-state resistance (RDS(on)) of just 1.0 mΩ. This ultra-low resistance ensures minimal conduction losses, allowing for more power to be delivered to the load with less energy wasted as heat. Consequently, designers can achieve higher efficiency targets, simplify cooling solutions, and create more compact, power-dense designs for applications like DC-DC converters and motor control systems.
Robustness for Demanding Environments
Automotive and industrial environments are notoriously harsh, subjecting components to voltage spikes, extreme temperatures, and frequent load changes. The IPD100N04S4-02 is built for this challenge. Its 100V drain-source voltage rating provides a comfortable margin for handling transients in 48V automotive systems and industrial power supplies. Furthermore, the device boasts exceptional avalanche ruggedness and a high maximum junction temperature, ensuring stable and reliable operation under the most stressful conditions. This inherent robustness is critical for safety-critical automotive applications such as electric power steering (EPS), braking systems, and transmission control.
Optimized for Automotive Excellence
As part of Infineon’s proprietary OptiMOS technology platform, this MOSFET is specifically qualified for the automotive sector. It complies with the stringent AEC-Q101 standard, guaranteeing its performance and reliability for use in vehicles. The device is also available in a space-saving, low-inductance SuperSO8 package (PG-TDSON-8). This advanced packaging not only reduces the footprint on the PCB but also improves switching performance by minimizing parasitic inductance, which is vital for high-frequency switching operations.
Broad Industrial Applicability
Beyond the automotive sphere, the IPD100N04S4-02’s characteristics make it an ideal candidate for a wide array of industrial uses. It is perfectly suited for:
Server and Telecom Power Supplies (PSUs): Where high efficiency is paramount for reducing operational costs and heat generation.
Solar Inverters and Battery Management Systems (BMS): Requiring reliable switching with low losses to maximize energy harvest and storage.
Industrial Motor Drives and Robotics: Demanding robust and efficient power control for precise motion.
ICGOO
The Infineon IPD100N04S4-02 is a superior 100V power MOSFET that encapsulates the cutting edge of power semiconductor technology. Its industry-leading low RDS(on) translates directly into maximized system efficiency and power density, while its automotive-grade ruggedness ensures uncompromising reliability in the most demanding applications. For engineers designing the next generation of automotive and industrial systems, this component offers a powerful, reliable, and efficient foundation for innovation.
Keywords: Power MOSFET, Automotive Grade, High Efficiency, OptiMOS Technology, Low RDS(on)
